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?20 10 fairchild semiconductor corporation f dd3682 _f085 rev. a fd d3682_f085 f dd3682_f085 n- channel powertrench ? m osfet 100v, 32a, 36m ? fe atures r ds (on) = 32 m ? (typ.), v gs = 1 0v, i d = 3 2a q g ( tot) = 18.5nc (typ.), v gs = 10 v low miller charge low q rr bo dy diode uis capability (single pulse and repetitive pulse) qualified to aec q101 f ormerly developmental type 82755 a pplications d c/dc converters and off-line ups distributed power architectures and vrms primary switch for 24v and 48v systems high voltage synchronous rectifier direct injection / diesel injection system 42v automotive load control electronic valve train system mo sfet maximum ratings t c = 25 c unless otherwise noted th ermal characteristics th is product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aec ounc il.com/ reliability data can be found at: http://www.fairchildsemi.com/pr oducts/discrete/reliability/index.html. all fairchild semiconductor products are manufactured, assembled and tested under iso 9000 and qs9000 quality systems certification. sy mbol parameter ratings units v ds s d rain to source voltage 100 v v gs g ate to source voltage 20 v i d d rain current 32 a continuous (t c = 25 o c, v gs = 10v) continuous (t c = 10 0 o c, v gs = 1 0v) 23 a continuous (t am b = 25 o c, v gs = 10v, r ja = 5 2 o c/ w) 5.5 a pulsed figure 4 a e as s ingle pulse avalanche energy (note 1) 55 mj p d p ower dissipation 95 w derate above 25 o c0 . 6 3 w / o c t j , t st g o perating and storage temperature -55 to 175 o c r jc t hermal resistance junction to case to-252 1.58 o c/ w r ja th ermal resistance junction to ambient to-252 100 o c/ w r ja t hermal resistance junction to ambient to-252, 1in 2 co pper pad area 52 o c/ w d g s to -252aa fd d series ga te source (flange) drain june 20 10 n-channel powertrench ? mosfet rohs compliant
package marking and ordering information electrical characteristics t c = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics resistive switching characteristics (v gs = 10v) drain-source diode characteristics notes: 1: starting t j = 25 c, l = 0.27mh, i as = 20a. device marking device package reel size tape width quantity fdd3682 fdd3682 _f085 sy mbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v i dss zero gate voltage drain current v ds = 80v - - 1 a v gs = 0v t c = 150 o c- - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a2-4v r ds(on) drain to source on resistance i d = 32a, v gs = 10v - 0.032 0.036 i d = 16a, v gs = 6v - 0.040 0.060 i d = 32a, v gs = 10v, t c = 175 o c - 0.080 0.090 c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz -1250- pf c oss output capacitance - 190 - pf c rss reverse transfer capacitance - 45 - pf q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 50v i d = 32a i g = 1.0ma -18.528nc q g(th) threshold gate charge v gs = 0v to 2v - 2.4 3.6 nc q gs gate to source gate charge - 6.5 - nc q gs2 gate charge threshold to plateau - 4.1 - nc q gd gate to drain ? miller ? charge - 4.6 - nc t on tur n -o n t im e v dd = 50v, i d = 32a v gs = 10v, r gs = 16 --83ns t d(on) tur n -o n d e lay ti me - 9 - ns t r rise time - 46 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 26 - ns t off turn-off time - - 75 ns v sd source to drain diode voltage i sd = 32a - - 1.25 v i sd = 16a - - 1.0 v t rr reverse recovery time i sd = 32a, di sd /dt = 100a/ s- - 55 ns q rr reverse recovery charge i sd = 32a, di sd /dt = 100a/ s- - 92 nc to-252aa 330mm 16mm 2500 units ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
typical characteristics t c = 25 c unless otherwise noted figure 1. normalized power dissipation vs ambient temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance figure 4. peak current capability t c , case temperature ( o c) power dissipation multiplier 0 0255075100 175 0.2 0.4 0.6 0.8 1.0 1.2 125 150 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 i d , drain current (a) t c , case temperature ( o c) v gs = 10v 0.01 0.1 1 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 2 t, rectangular pulse duration (s) z jc , normalized thermal impedance notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 0.5 0.2 0.1 0.05 0.01 0.02 duty cycle - descending order single pulse 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 30 400 i dm , peak current (a) t, pulse width (s) transconductance may limit current in this region v gs = 10v t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows: ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
figure 5. forward bias safe operating area note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching capability figure 7. transfer characteristics figure 8. saturation characteristics figure 9. drain to source on resistance vs drain current figure 10. normalized drain to source on resistance vs junction temperature typical characteristics t c = 25 c unless otherwise noted v ds , drain to source voltage (v) i d , drain current (a) 0.1 1 10 100 1 10 100 200 200 t j = max rated t c = 25 o c single pulse limited by r ds(on) area may be operation in this 10 s 100 s 1ms 10ms dc 1 10 100 0.001 0.01 0.1 1 10 i as , avalanche current (a) t av , time in avalanche (ms) starting t j = 25 o c starting t j = 150 o c t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] 0 20 40 60 80 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 i d , drain current (a) v gs , gate to source voltage (v) pulse duration = 80 s duty cycle = 0.5% max v dd = 15v t j = 175 o c t j = 25 o c t j = -55 o c 0 20 40 60 80 01234 i d , drain current (a) v ds , drain to source voltage (v) v gs = 6v pulse duration = 80 s duty cycle = 0.5% max v gs = 5v t c = 25 o c v gs = 20v v gs = 10v 20 30 40 50 60 0 5 10 15 20 25 30 35 id, drain current (a) vgs = 10v drain to source on resistance (m ) vgs = 6v pulse duration = 80ms duty cycle = 0.5% max 0.5 1.0 1.5 2.0 2.5 3.0 -80 -40 0 40 80 120 160 200 normalized drain to source t j , junction temperature ( o c) on resistance v gs = 10v, i d =32a pulse duration = 80 s duty cycle = 0.5% max ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14. gate charge waveforms for constant gate currents typical characteristics t c = 25 c unless otherwise noted 0.4 0.6 0.8 1.0 1.2 -80 -40 0 40 80 120 160 200 normalized gate t j , junction temperature ( o c) v gs = v ds , i d = 250 a threshold voltage 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 t j , junction temperature ( o c) normalized drain to source i d = 250 a breakdown voltage 100 1000 0.1 1 10 100 2000 20 c, capacitance (pf) v gs = 0v, f = 1mhz c iss c gs + c gd c oss c ds + c gd c rss c gd v ds , drain to source voltage (v) 0 2 4 6 8 10 0 5 10 15 20 v gs , gate to source voltage (v) qg, gate charge (nc) v dd = 50v i d = 32a i d = 16a waveforms in descending order: ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
test circuits and waveforms figure 15. unclamped energy test circuit figure 16. unclamped energy waveforms figure 17. gate charge test circuit figure 18. gate charge waveforms figure 19. switching time test circuit figure 20. switching time waveforms t p v gs 0.01 l i as + - v ds v dd r g dut vary t p to obtain required peak i as 0v v dd v ds bv dss t p i as t av 0 v gs + - v ds v dd dut i g(ref) l v dd q g(th) v gs = 2v q g(tot) v gs = 10v v ds v gs i g(ref) 0 0 q gs q gd q gs2 v gs r l r gs dut + - v dd v ds v gs t on t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs 0 0 ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
thermal resistance vs. mounting pad area the maximum rated junction temperature, t jm , and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, p dm , in an application. therefore the application ? s ambient temperature, t a ( o c), and thermal resistance r ja ( o c/w) must be reviewed to ensure that t jm is never exceeded. equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. in using surface mount devices such as the to-252 package, the environment in which it is applied will have a significant influence on the part ? s current and maximum power dissipation ratings. precise determination of p dm is complex and influenced by many factors: 1. mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. the number of copper layers and the thickness of the board. 3. the use of external heat sinks. 4. the use of thermal vias. 5. air flow and board orientation. 6. for non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. fairchild provides thermal information to assist the designer ? s preliminary application evaluation. figure 21 defines the r ja for the device as a function of the top copper (component side) area. this is for a horizontally positioned fr-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. this graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. pulse applications can be evaluated using the fairchild device spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. thermal resistances corresponding to other copper areas can be obtained from figure 21 or by calculation using equation 2 or 3. equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeter square. the area, in square inches or square centimeters is the top copper area including the gate and source pads. (eq. 1) p dm t jm t a ?
r ja ----------------------------- = area in inches squared (eq. 2) r ja 33.32 23.84 0.268 area +
------------------------------------ - + = (eq. 3) r ja 33.32 154 1.73 area +
--------------------------------- - + = area in centimeters squared 25 50 75 100 125 0.01 0.1 1 10 figure 21. thermal resistance vs mounting pad area r ja = 33.32+ 23.84/(0.268+area) eq.2 r ja ( o c/w) area, top copper area in 2 (cm 2 ) r ja = 33.32+ 154/(1.73+area) eq.3 (0.645) (6.45) (64.5) (0.0645) ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
pspice electrical model .subckt fdd3682 2 1 3 ; rev jun 2002 ca 12 8 4e-10 cb 15 14 6e-10 cin 6 8 1.22e-9 dbody 7 5 dbodymod dbreak 5 11 dbreakmod dplcap 10 5 dplcapmod ebreak 11 7 17 18 112 eds 14 8 5 8 1 egs 13 8 6 8 1 esg 6 10 6 8 1 evthres 6 21 19 8 1 evtemp 20 6 18 22 1 it 8 17 1 lgate 1 9 4.88e-9 ldrain 2 5 1.0e-9 lsource 3 7 2.24e-9 rlgate 1 9 48.8 rldrain 2 5 10 rlsource 3 7 22.4 mmed 16 6 8 8 mmedmod mstro 16 6 8 8 mstromod mweak 16 21 8 8 mweakmod rbreak 17 18 rbreakmod 1 rdrain 50 16 rdrainmod 10.5e-3 rgate 9 20 1.8 rslc1 5 51 rslcmod 1.0e-6 rslc2 5 50 1.0e3 rsource 8 7 rsourcemod 11.9e-3 rvthres 22 8 rvthresmod 1 rvtemp 18 19 rvtempmod 1 s1a 6 12 13 8 s1amod s1b 13 12 13 8 s1bmod s2a 6 15 14 13 s2amod s2b 13 15 14 13 s2bmod vbat 22 19 dc 1 eslc 51 50 value={(v(5,51)/abs(v(5,51)))*(pwr(v(5,51)/(1e-6*70),2.5))} .model dbodymod d (is=2.4e-12 rs=4.4e-3 trs1=2.0e-3 trs2=4.5e-7 + cjo=9e-10 m=0.58 tt=2.9e-8 xti=4.0) .model dbreakmod d (rs=0.6 trs1=1.4e-3 trs2=-5.0e-5) .model dplcapmod d (cjo=2.75e-10 is=1.0e-30 n=10 m=0.56) .model mstromod nmos (vto=4.16 kp=32 is=1e-30 n=10 tox=1 l=1u w=1u) .model mmedmod nmos (vto=3.48 kp=2.7 is=1e-30 n=10 tox=1 l=1u w=1u rg=1.8) .model mweakmod nmos (vto=2.96 kp=0.068 is=1e-30 n=10 tox=1 l=1u w=1u rg=18 rs=0.1) .model rbreakmod res (tc1=1.1e-3 tc2=-1.1e-8) .model rdrainmod res (tc1=1.5e-2 tc2=4e-5) .model rslcmod res (tc1=3.0e-3 tc2=2.9e-6) .model rsourcemod res (tc1=1e-3 tc2=1e-6) .model rvthresmod res (tc1=-3.9e-3 tc2=-1.4e-5) .model rvtempmod res (tc1=-3.5e-3 tc2=1.3e-6) .model s1amod vswitch (ron=1e-5 roff=0.1 von=-5.0 voff=-2.0) .model s1bmod vswitch (ron=1e-5 roff=0.1 von=-2.0 voff=-5.0) .model s2amod vswitch (ron=1e-5 roff=0.1 von=-0.4 voff=0.3) .model s2bmod vswitch (ron=1e-5 roff=0.1 von=0.3 voff=-0.4) .ends note: for further discussion of the pspice model, consult a new pspice sub-circuit for the power mosfet featuring global temperature options ; ieee power electronics specialist conference records, 1991, written by william j. hepp and c. frank wheatley. 18 22 + - 6 8 + - 5 51 + - 19 8 + - 17 18 6 8 + - 5 8 + - rbreak rvtemp vbat rvthres it 17 18 19 22 12 13 15 s1a s1b s2a s2b ca cb egs eds 14 8 13 8 14 13 mweak ebreak dbody rsource source 11 7 3 lsource rlsource cin rdrain evthres 16 21 8 mmed mstro drain 2 ldrain rldrain dbreak dplcap eslc rslc1 10 5 51 50 rslc2 1 gate rgate evtemp 9 esg lgate rlgate 20 + - + - + - 6 ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
saber electrical model rev jun 2002 template fdd3682 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=2.4e-12,rs=4.4e-3,trs1=2.0e-3,trs2=4.5e-7,cjo=9e-10,m=0.58,tt=2.9e-8,xti=4.0) dp..model dbreakmod = (rs=0.6,trs1=1.4e-3,trs2=-5e-5) dp..model dplcapmod = (cjo=2.7e-10,isl=10e-30,nl=10,m=0.56) m..model mstrongmod = (type=_n,vto=4.16,kp=32,is=1e-30, tox=1) m..model mmedmod = (type=_n,vto=3.48,kp=2.7,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=2.96,kp=0.068,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5,voff=-2) sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-2,voff=-5) sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.4,voff=0.3) sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.3,voff=-0.4) c.ca n12 n8 = 4e-10 c.cb n15 n14 = 6e-10 c.cin n6 n8 = 1.22e-9 dp.dbody n7 n5 = model=dbodymod dp.dbreak n5 n11 = model=dbreakmod dp.dplcap n10 n5 = model=dplcapmod spe.ebreak n11 n7 n17 n18 = 112 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evthres n6 n21 n19 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 i.it n8 n17 = 1 l.lgate n1 n9 = 4.88e-9 l.ldrain n2 n5 = 1.0e-9 l.lsource n3 n7 = 2.24e-9 res.rlgate n1 n9 = 48.8 res.rldrain n2 n5 = 10 res.rlsource n3 n7 = 22.4 m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1=1.1e-3,tc2=-1.1e-8 res.rdrain n50 n16 = 10.5e-3, tc1=1.5e-2,tc2=4e-5 res.rgate n9 n20 = 1.8 res.rslc1 n5 n51 = 1.0e-6, tc1=3.0e-3,tc2=2.9e-6 res.rslc2 n5 n50 = 1.0e3 res.rsource n8 n7 = 11.9e-3, tc1=1e-3,tc2=1e-6 res.rvthres n22 n8 = 1, tc1=-3.9e-3,tc2=-1.4e-5 res.rvtemp n18 n19 = 1, tc1=-3.5e-3,tc2=1.3e-6 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/70))** 2.5)) } } 18 22 + - 6 8 + - 19 8 + - 17 18 6 8 + - 5 8 + - rbreak rvtemp vbat rvthres it 17 18 19 22 12 13 15 s1a s1b s2a s2b ca cb egs eds 14 8 13 8 14 13 mweak ebreak dbody rsource source 11 7 3 lsource rlsource cin rdrain evthres 16 21 8 mmed mstro drain 2 ldrain rldrain dbreak dplcap iscl rslc1 10 5 51 50 rslc2 1 gate rgate evtemp 9 esg lgate rlgate 20 + - + - + - 6 ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
spice thermal model rev 20 jun 2002 fdd3682_jc th tl ctherm1 th 6 1.6e-3 ctherm2 6 5 4.5e-3 ctherm3 5 4 5.0e-3 ctherm4 4 3 8.0e-3 ctherm5 3 2 8.2e-3 ctherm6 2 tl 4.7e-2 rtherm1 th 6 3.3e-2 rtherm2 6 5 7.9e-2 rtherm3 5 4 9.5e-2 rtherm4 4 3 1.4e-1 rtherm5 3 2 2.9e-1 rtherm6 2 tl 6.7e-1 saber thermal model saber thermal model fdd3682 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =1.6e-3 ctherm.ctherm2 6 5 =4.5e-3 ctherm.ctherm3 5 4 =5.0e-3 ctherm.ctherm4 4 3 =8.0e-3 ctherm.ctherm5 3 2 =8.2e-3 ctherm.ctherm6 2 tl =4.7e-2 rtherm.rtherm1 th 6 =3.3e-2 rtherm.rtherm2 6 5 =7.9e-2 rtherm.rtherm3 5 4 =9.5e-2 rtherm.rtherm4 4 3 =1.4e-1 rtherm.rtherm5 3 2 =2.9e-1 rtherm.rtherm6 2 tl =6.7e-1 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case ? 20 10 fairchild semiconductor corporation fdd3682 _f085 rev. a fd d3682_f085 n-channel powertrench ? mosfet
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